Pressure- and Temperature-Dependence of the Electrical Resistivity of Some Nonmagnetic d-electron Amorphous Alloys
نویسندگان
چکیده
Using the Ziman-formulation a model is derived which describes the pressure dependence of the electrical resistivity of d-electron amorphous alloys. It is shown how the volume dependence of the scattering-potential, electron-gas-properties and the Grüneisenparameter determine the P-dependence of a constant and a temperature dependent term in the resistivity. The absolute value of the resistivity is discussed.
منابع مشابه
Magnetic and Electerical Resistivity Behavior of Amorphous Ni Co P Films
Magnetic and Electrical Resistivity Study of Electroless Amorphous Ternary System (Ni-Co-P) show a qualitative dependence of crystalline phases formed during transformation on the annealing temperature and composition. Electrical Resistivity values increases with increase in cobalt content and samples with higher resistivity show lower temperature coefficients. The Initial increase in magnetiza...
متن کاملTransport properties of Ni81.5B18.5 - YP y amorphous alloys
The thermoelectric power of the amorphous nonmagnetic alloy system Ni81.5B18.5-yPy (y = 0, 1.8, 3.7, 7.4, 13, 16.8 and 18.5 at % P) has been investigated in the temperature range between 77 and 350 K. The resistivity and temperature coefficient of resistivity have also been measured. The high temperature slope of the thermopower, the resistivity and the room temperature coefficient of resistivi...
متن کاملTEMPERATURE DEPENDENCE OF THE EXTRAORDINARY HALL EFFECT IN AMORPHOUS ( FeCoNi)78B12Si10 ALLOYS
Temperature dependences of the extraordinary Hall coeficient R, and resistivity p, yield a m p 2 (arising from the side-jump mechanism) for the majority of investigated FeCoNi-based alloys. The deviation from p2 variation in Co-rich alloys is probably due to the temperature dependence of the magnetic anisotropy in these alloys. One of the characteristic features of amorphous ferromagnetic alloy...
متن کاملPressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.
Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous an...
متن کاملA study on the dependence of DC electrical properties and nanostructure of Cu thin films on film thickness
This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...
متن کامل